Test pattern for microwave dielectric properties of SrBi2Ta2O9

被引：0
|
作者：
Delmonte, N [1 ]
Watts, BE [1 ]
Rosa, L [1 ]
Chiorboli, G [1 ]
Cova, P [1 ]
Menozzi, R [1 ]
机构：
[1] Univ Parma, Dipartimento Ingn Informaz, I-43100 Parma, Italy
来源：
2005 PhD Research in Microelectronics and Electronics, Vols 1 and 2, Proceedings | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A test structure employing a one-step lithography process has been built for measuring the complex impedance of ferroelectric capacitors at microwaves. The measurements are compared to the results of a finite element analysis with the aim of developing an electrical model of the test structure in which parasitic elements appear. These elements can be experimentally measured and partially de-embedded. The purpose of this paper is the characterization of strontium-bismuth tantalate (SBT) capacitors for microwave ICs or SoCs.
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页码：195 / 198
页数：4
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