Test pattern for microwave dielectric properties of SrBi2Ta2O9

被引：0

作者：

Delmonte, N ^{[1
]}

Watts, BE ^{[1
]}

Rosa, L ^{[1
]}

Chiorboli, G ^{[1
]}

Cova, P ^{[1
]}

Menozzi, R ^{[1
]}

机构：

[1] Univ Parma, Dipartimento Ingn Informaz, I-43100 Parma, Italy

来源：

2005 PhD Research in Microelectronics and Electronics, Vols 1 and 2, Proceedings | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A test structure employing a one-step lithography process has been built for measuring the complex impedance of ferroelectric capacitors at microwaves. The measurements are compared to the results of a finite element analysis with the aim of developing an electrical model of the test structure in which parasitic elements appear. These elements can be experimentally measured and partially de-embedded. The purpose of this paper is the characterization of strontium-bismuth tantalate (SBT) capacitors for microwave ICs or SoCs.

引用

页码：195 / 198

页数：4

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