III-V semiconductor-based MOEMS

被引：2
|
作者：
Viktorovitch, P [1 ]
机构：
[1] Ecole Cent Lyon, LEOM, UMR CNES 5512, F-69131 Ecully, France
来源：
DESIGN, TEST, AND MICROFABRICATION OF MEMS AND MOEMS, PTS 1 AND 2 | 1999年 / 3680卷
关键词：
MOEMS; InP; Fabry-Perot micro-cavity; tunable filter; infra-red photodetector; photonic band gap;
D O I：
10.1117/12.341197
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The state of the art of III-V semiconductor based Micro-Opto-Mechanical Systems (MOEMS) is presented with a special emphasis on InP and related materials. It is shown that the MOEMS technology can enhance considerably the capabilities of optical micro-cavities, which are considered as a major component for optical signal processing and light generation. Illustrations of the potential of m-V MOEMS are given in the fields of Optical Telecommunications and Near Infra-Red photodetection. Future prospects implying the marriage of MOEMS approach with Photonic Band Gap concepts are proposed.
引用
收藏
页码：30 / 40
页数：11
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