Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k.p method\

被引：9
|
作者：
Chen, Baile [1 ]
Holmes, A. L., Jr. [1 ]
Khalfin, Viktor [2 ]
Kudryashov, Igor [2 ]
Onat, Bora. M. [2 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Princeton Lightwave Inc, Cranbury, NJ 08512 USA
来源：
LASER TECHNOLOGY FOR DEFENSE AND SECURITY VIII | 2012年 / 8381卷
关键词：
k.p method; Type-II Quantum Well; Laser diode; Mid-infrared; optical gain;
D O I：
10.1117/12.918764
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Different type-II InGaAs/GaAsSb quantum well design structures on InP substrate for mid-infrared emission has been modeled by six band k . p method. The dispersion relations, optical matrix element, optical gain and spontaneous emission rate are calculated. The effects of the parameters of quantum wells (thickness, composition) and properties of cladding layers were investigated. For injected carrier concentration of 5x10(12) cm(-2), peak gain values around 2.6-2.7 mu m wavelengths of the order of 1000 cm(-1) can be achieved, which shows that type-II InGaAs/GaAsSb quantum wells are suitable for infrared laser operation beyond 2 mu m at room temperature.
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页数：7
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