X-ray spectroscopy studies of luminescent Si-based materials

被引：0
|
作者：
Roschuk, T. [1 ]
Wilson, P. R. J. [1 ]
Li, J. [1 ]
Wojcik, J. [1 ]
Mascher, P. [1 ]
机构：
[1] McMaster Univ, Dept Engn Phys, Ctr Emerging Device Technol, Hamilton, ON, Canada
来源：
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2008年
关键词：
D O I：
10.1109/GROUP4.2008.4638175
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
X-ray based spectroscopies have been used to study nanocluster formation and luminescence in silicon oxynitride-based materials. For a luminescent Ce-doped silicon oxide details of the local chemical environment of the Ce atoms has been obtained.
引用
收藏
页码：288 / 290
页数：3
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