X-ray spectroscopy studies of luminescent Si-based materials

被引：0

作者：

Roschuk, T. ^{[1
]}

Wilson, P. R. J. ^{[1
]}

Li, J. ^{[1
]}

Wojcik, J. ^{[1
]}

Mascher, P. ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Ctr Emerging Device Technol, Hamilton, ON, Canada

来源：

2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2008年

关键词：

D O I：

10.1109/GROUP4.2008.4638175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-ray based spectroscopies have been used to study nanocluster formation and luminescence in silicon oxynitride-based materials. For a luminescent Ce-doped silicon oxide details of the local chemical environment of the Ce atoms has been obtained.

引用

页码：288 / 290

页数：3

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