Freestanding Ge/SiO2 Core/Shell Nanoparticles Formed via Metastable SiO2 Hollow Nanospheres on a Si Wafer

被引：2
|
作者：
Park, Kwang-Tae [1 ]
Um, Han-Don [1 ]
Jee, Sang-Won [1 ]
Jung, Jin-Young [1 ]
Park, Yun Chang [2 ]
Yang, Jun Mo [2 ]
Lee, Jung-Ho [1 ]
机构：
[1] Hanyang Univ, Dept Chem Engn, Ansan 426791, South Korea
[2] Natl Nanofab Ctr, Measurement & Anal Div, Taejon 305343, South Korea
来源：
CHEMICAL VAPOR DEPOSITION | 2008年 / 14卷 / 11-12期
关键词：
D O I：
10.1002/cvde.200804264
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Freestanding Ge/SiO2 core/shell nanoparticles were synthesized via metastable SiO2 hollow nanospheres by atmospheric-pressure thermal chemical Vapor deposition (APCVD) using SiCl4 and GeCl4 source gases. The Ge-core and. SiO2-shell thicknesses could be controlled by adjusting the annealing time and the source gas ratio. These-nanoparticles might be useful as labeling markers for fluorescent applications.
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页码：331 / +
页数：4
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