Freestanding Ge/SiO2 Core/Shell Nanoparticles Formed via Metastable SiO2 Hollow Nanospheres on a Si Wafer

被引:2
|
作者
Park, Kwang-Tae [1 ]
Um, Han-Don [1 ]
Jee, Sang-Won [1 ]
Jung, Jin-Young [1 ]
Park, Yun Chang [2 ]
Yang, Jun Mo [2 ]
Lee, Jung-Ho [1 ]
机构
[1] Hanyang Univ, Dept Chem Engn, Ansan 426791, South Korea
[2] Natl Nanofab Ctr, Measurement & Anal Div, Taejon 305343, South Korea
关键词
D O I
10.1002/cvde.200804264
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Freestanding Ge/SiO2 core/shell nanoparticles were synthesized via metastable SiO2 hollow nanospheres by atmospheric-pressure thermal chemical Vapor deposition (APCVD) using SiCl4 and GeCl4 source gases. The Ge-core and. SiO2-shell thicknesses could be controlled by adjusting the annealing time and the source gas ratio. These-nanoparticles might be useful as labeling markers for fluorescent applications.
引用
收藏
页码:331 / +
页数:4
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