Characterization of Bridgman grown GaSe:Al crystals

被引：26
|
作者：
Guo, J. [1 ]
Xie, J. -J. [1 ]
Zhang, L. -M. [1 ]
Li, D. -J. [1 ]
Yang, G. -L. [1 ]
Andreev, Yu. M. [2 ,3 ]
Kokh, K. A. [4 ]
Lanskii, G. V. [2 ,3 ]
Shabalina, A. V. [3 ]
Shaiduko, A. V. [2 ,3 ]
Svetlichnyi, V. A. [3 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Laser Interact Matter, Changchun 130033, Peoples R China
[2] Inst Monitoring Climat & Ecol Syst SB RAS, Lab Geosphere Biosphere Interact, Tomsk 634055, Russia
[3] Tomsk State Univ, Siberian Phys Tech Inst, Lab Adv Mat & Technol, Tomsk 634050, Russia
[4] SB RAS, Inst Geol & Mineral, Lab Crystal Growth, Novosibirsk 630090 90, Russia
来源：
CRYSTENGCOMM | 2013年 / 15卷 / 32期
关键词：
GENERATION;
D O I：
10.1039/c3ce40116b
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Centimeter-sized Al-doped nonlinear GaSe crystals were grown by the modified Bridgman method with heat field rotation. The alumina distribution coefficient in the grown crystals was estimated to be about 8 x 10(-2) for GaSe:Al (>= 0.1 at%) crystals. GaSe: Al (<= 0.5 at%) crystals possess optical properties suitable for non-linear applications. For the first time the increase in the ordinary refractive index of GaSe crystals with doping was demonstrated to be different to other doped GaSe crystals.
引用
收藏
页码：6323 / 6328
页数：6
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