A W-band Stacked FET Power Amplifier with 17 dBm Psat in 45-nm SOI CMOS

被引：0

作者：

Jayamon, Jefy ^{[1
]}

Agah, Amir ^{[1
]}

Hanafi, Bassel ^{[1
]}

Dabag, Hayg ^{[1
]}

Buckwalter, James ^{[1
]}

Asbeck, Peter ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

2013 IEEE TOPICAL CONFERENCE ON POWER AMPLIFIERS FOR WIRELESS AND RADIO APPLICATIONS (PAWR) | 2013年

关键词：

CMOS SOI; millimeter-wave; Power amplifier; stacked FET; W-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 90GHz power amplifier implemented with three series-connected (stacked) FETs in 45-nm SOI CMOS is reported. Stacking FETs allows increasing voltage handling capability of circuits with highly scaled CMOS transistors. This work shows for the first time that the stacking strategy is effective up to W band. The amplifier achieves power gain of 8 dB at 91 GHz with 3 dB bandwidth of 18 GHz using a supply voltage of 4.2 V. It delivers saturated output power of 17.3 dBm in 88 - 90 GHz range with peak PAE of 9 %. The PA chip occupies 0.256 mm(2) including the pads. This chip demonstrates the highest output power from a CMOS PA in this frequency regime.

引用

页码：85 / 87

页数：3

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