A 97-107 GHz Triple-Stacked-FET Power Amplifier with 23.7dB Peak Gain, 15.1dBm PSAT, and 18.6% PAEMAX in 28-nm FD-SOI CMOS

被引：3

作者：

Kim, Kyunghwan ^{[1
]}

Lee, Kangseop ^{[1
]}

Choi, Seung-Uk ^{[1
]}

Kim, Jiseul ^{[1
]}

Choi, Chan-Gyu ^{[1
]}

Song, Ho-Jin ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Elect Engn, Pohang, South Korea

来源：

2022 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2022年

关键词：

millimeter wave; power amplifiers; stacked-FET; stacking; F-band; FD-SOI; CMOS; high efficiency; DESIGN;

D O I：

10.1109/RFIC54546.2022.9863175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 97-107 GHz power amplifier (PA) based on a stacked-FET topology is presented. In a triple-stacked-FET structure, stacking efficiency is analyzed using four combinations of series or shunt inductors for compensating phase of impedances between stack nodes, and optimal inductances are chosen. Phase-compensation inductors are implemented by considering a finite quality factor with the tradeoff between layout size and stacking efficiency. A layout of a transistor cell is customized to reduce gate resistance. The triple-stacked-FET PA provides peak P-SAT and PAE(MAX) of 15.1 dBm and 18.6%, respectively. The presented PA achieves the highest power density and efficiency compared to state-of-the-art CMOS PAs in F-band.

引用

页码：183 / 186

页数：4

共 5 条

[1] A 160-GHz Power Amplifier with 32-dB Gain and 9.8% Peak PAE in 28-nm FD-SOI
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