A 120-150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm Psat for Sub-THz Imaging System

被引：24
|
作者：
Zhang, Jincheng [1 ]
Wu, Tianxiang [1 ]
Nie, Lihe [1 ]
Ma, Shunli [1 ]
Chen, Yong [2 ,3 ]
Ren, Junyan [1 ]
机构：
[1] Fudan Univ, State Key Lab ASIC & Syst, Shanghai 201203, Peoples R China
[2] Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Macau 999078, Peoples R China
[3] Univ Macau, Fac Sci & Technol, Dept Elect & Comp Engn, Macau 999078, Peoples R China
来源：
IEEE ACCESS | 2021年 / 9卷
基金：
中国国家自然科学基金;
关键词：
Logic gates; Transistors; Feeds; Resistance; Layout; Imaging; Topology; D-band; power amplifier (PA); sub-terahertz (sub-THz); CMOS; power combining; imaging system; frequency modulated continuous wave (FMCW); D-BAND; OPTIMIZATION; DESIGN;
D O I：
10.1109/ACCESS.2021.3080710
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a high-gain D-band power amplifier (PA) fabricated with 28-nm CMOS technology for a sub-terahertz frequency modulated continuous wave imaging system. It adopts two-channel power combining using artificial transmission lines to absorb the parasitic capacitance of the ground-signal-ground pad. The layout of the transistors and neutralization capacitors are optimized to improve the maximum stable gain, stability, and robustness. Asymmetrically magnetically coupled resonators are used in inter-stage and input matching networks to extend the operating bandwidth. The PA achieves a peak power gain of 21.9 dB and maximum output power of 11.8 dBm with 10.7% of power-added efficiency. Also, this PA can achieve higher than 10 dBm output power over the frequency range of 120-150 GHz.
引用
收藏
页码：74752 / 74762
页数：11
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