Random Telegraph Signal Noise Arising from Grain Boundary Traps in Nano-scale Poly-Si Nanowire Thin-Film Transistors

被引：0
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作者：
Lee, Chen-Ming [1 ]
Tsui, Bing-Yue [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu, Taiwan
来源：
2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) | 2013年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nano-scale poly-Si thin-film transistor (TFT) is a promising device for the three-dimensional integrated circuits (3D IC) and 3D stacked flash memories. Random telegraph signal noise (RTN) arising from grain boundary traps is identified and a grain-boundary-induced-fluctuation (GBIF) model is proposed for the first time. Amonia plasma treatment can suppress this RTN source effectively.
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