Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors

被引：2
|
作者：
Shin, Wonjun [1 ]
Kim, Sangwoo [2 ]
Koo, Ryun-Han [1 ]
Kwon, Dongseok [1 ]
Kim, Jae-Joon [1 ]
Kwon, Deok-Hwang [3 ]
Kwon, Daewoong [2 ]
Lee, Jong-Ho [1 ]
机构：
[1] Seoul Natl Univ, Interuniv Semicond Res Ctr ISRC, Dept Elect & Comp Engn, Seoul, South Korea
[2] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
[3] Korea Inst Sci & Technol, Ctr Energy Mat Res, Seoul 02792, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
Channel length; 1/f noise; ferroelectric junctionless thin-film transistor (FE JL TFT); low-frequency noise (LFN); NANOWIRE TRANSISTORS;
D O I：
10.1109/LED.2023.3267134
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we explore the low-frequency noise (LFN) characteristics of hafnium-zirconium ferroelectric junctionless poly-Si thin-film transistors (FE JL TFTs) with different channel lengths (Ls). The findings reveal that the magnitude of 1/f noise decreases with a decrease in L, exhibiting the opposite trend from that of conventional FETs. Additionally, it is observed that the protrusion of poly-Si is more susceptible to damage from tensile stress during post-metal annealing in devices with longer L.
引用
收藏
页码：1003 / 1006
页数：4
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