High performance InGaZnO-based Schottky diodes fabricated at room temperature

被引：14

作者：

Yan, Linlong ^{[1
]}

Xin, Qian ^{[1
]}

Du, Lulu ^{[1
]}

Zhang, Jiawei ^{[2
]}

Luo, Yi ^{[1
]}

Wang, Qingpu ^{[1
]}

Song, Aimin ^{[1
,2
]}

机构：

[1] Shandong Univ, Sch Phys, 27 Shanda Nanlu, Jinan 250100, Peoples R China

[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9 | 2016年 / 13卷 / 7-9期

关键词：

indium gallium zinc oxide (InGaZnO or IGZO); Schottky diodes; radio-frequency magnetron sputtering; SEMICONDUCTOR; CONTACTS; MEMORY;

D O I：

10.1002/pssc.201510291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, Indium gallium zinc oxide (InGaZnO or IGZO) has attracted much attention for flexible and transparent electronics, because of its superior electric properties, optical transparency and low processing temperature. In this work, Schottky diodes with a structure of Pd/IGZO/Ti/Au were fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment. The optimised diode with a 66-nm-IGZO layer shows an extremely large barrier height (1.02 eV), a very high rectification ratio (> 8.5 x 10(7)), and a close to unit ideality factor (1.23). Our results suggest that Pd and IGZO can form very high quality Schottky contact with a large barrier height, extremely low defects density and high uniformity. (C) 2016 WILEY-VCH Verlag GmbH & Co.

引用

页码：618 / 622

页数：5

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