Full bridge circuit based on pentacene schottky diodes fabricated on plastic substrates

In this work, we demonstrate a full bridge diode (FBD) circuit compatible and fabricated on flexible polyethylene naphthalene (PEN) substrate. The fabrication was carried out using photolithography-based processes and pentacene Schottky diodes as the active circuit components. The individual pentacene diodes show the on/off current ratio of 105, with reverse and forward bias current densities of 10(-4) and 10(2) A cm(-2), respectively. Diodes and the full bridge configuration were measured in the range of -10 to +10 V. Discrete diodes fabricated in the same substrate show similar behavior to those integrated in the FBD circuit. The frequency response was evaluated using an ac signal and voltage ranging from 1 to 5 MHz and -10 to +10V, respectively. The dc output voltage under these conditions was 7-8.5 V for individual diodes and 3-5.5 V for the FBD circuit. The resulting FBD circuits show full wave rectification for ac signals up to +/- 10 V in the frequency regime tested. The circuit demonstrated could be used for ac-related energy harvesting requiring rectification. One of such energy harvesting approaches could be power generated from micro-cantilevers.