High performance InGaZnO-based Schottky diodes fabricated at room temperature

被引：14
|
作者：
Yan, Linlong [1 ]
Xin, Qian [1 ]
Du, Lulu [1 ]
Zhang, Jiawei [2 ]
Luo, Yi [1 ]
Wang, Qingpu [1 ]
Song, Aimin [1 ,2 ]
机构：
[1] Shandong Univ, Sch Phys, 27 Shanda Nanlu, Jinan 250100, Peoples R China
[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9 | 2016年 / 13卷 / 7-9期
关键词：
indium gallium zinc oxide (InGaZnO or IGZO); Schottky diodes; radio-frequency magnetron sputtering; SEMICONDUCTOR; CONTACTS; MEMORY;
D O I：
10.1002/pssc.201510291
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Recently, Indium gallium zinc oxide (InGaZnO or IGZO) has attracted much attention for flexible and transparent electronics, because of its superior electric properties, optical transparency and low processing temperature. In this work, Schottky diodes with a structure of Pd/IGZO/Ti/Au were fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment. The optimised diode with a 66-nm-IGZO layer shows an extremely large barrier height (1.02 eV), a very high rectification ratio (> 8.5 x 10(7)), and a close to unit ideality factor (1.23). Our results suggest that Pd and IGZO can form very high quality Schottky contact with a large barrier height, extremely low defects density and high uniformity. (C) 2016 WILEY-VCH Verlag GmbH & Co.
引用
收藏
页码：618 / 622
页数：5
相关论文
共 50 条
  • [1] Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes
    Xin, Qian
    Yan, Linlong
    Du, Lulu
    Zhang, Jiawei
    Luo, Yi
    Wang, Qingpu
    Song, Aimin
    THIN SOLID FILMS, 2016, 616 : 569 - 572
  • [2] High-Performance InGaZnO-Based ReRAMs
    Ma, Pengfei
    Liang, Guangda
    Wang, Yiming
    Li, Yunpeng
    Xin, Qian
    Li, Yuxiang
    Song, Aimin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (06) : 2600 - 2605
  • [3] High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO
    Du, Lulu
    Zhang, Jiawei
    Li, Yunpeng
    Xu, Mingsheng
    Wang, Qingpu
    Song, Aimin
    Xin, Qian
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (10) : 4326 - 4333
  • [4] Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin films
    Schlupp, Peter
    von Wenckstern, Holger
    Grundmann, Marius
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (10):
  • [5] Rectified Schottky diodes based on PEDOT: PSS/InGaZnO junctions
    Chang, Ching-Hsiang
    Hsu, Chao-Jui
    Wu, Chung-Chih
    ORGANIC ELECTRONICS, 2017, 48 : 35 - 40
  • [6] High temperature operation of logic AND gate based on diamond Schottky diodes fabricated by selective growth method
    Liu, Benjian
    Zhang, Sen
    Ralchenko, Viktor
    Wen, Dongyue
    Zhang, Xiaohui
    Xue, Jingjing
    Qiao, Pengfei
    Wang, Weihua
    Zhao, Jiwen
    Cao, Wenxin
    Dai, Bing
    Liu, Kang
    Han, Jiecai
    Zhu, Jiaqi
    CARBON, 2022, 197 : 292 - 300
  • [7] Reliable High-Performance Amorphous InGaZnO Schottky Barrier Diodes With Silicon Dioxide Passivation Layer
    Zhou, Jitong
    Wang, Yunping
    Zhou, Xianda
    Li, Guijun
    Xia, Zhihe
    Yeung, Fion Sze Yan
    Wong, Man
    Kwok, Hoi Sing
    Zhang, Shengdong
    Lu, Lei
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (09) : 1338 - 1341
  • [8] High temperature/high power Schottky diodes
    Wright, N.G.
    O'Neill, A.G.
    Johnson, C.M.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1997, B46 (1-3): : 57 - 60
  • [9] High temperature/high power Schottky diodes
    Wright, NG
    ONeill, AG
    Johnson, CM
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 57 - 60
  • [10] High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes
    Rao, Sandro
    Pangallo, Giovanni
    Pezzimenti, Fortunato
    Della Corte, Francesco G.
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (07) : 720 - 722
12345