Optical field effect transistor with an indium tin oxide gate electrode

被引：0
|
作者：
Fodje, JB [1 ]
Mukherjee, D [1 ]
Hogarth, CA [1 ]
机构：
[1] S BANK UNIV,SCH EEIE,LONDON SE1 0AA,ENGLAND
来源：
OPTICAL CHARACTERIZATION TECHNIQUES FOR HIGH-PERFORMANCE MICROELECTRONIC DEVICE MANFACTURING III | 1996年 / 2877卷
关键词：
OPFET; ITO; barrier height enhancement; optoelectronic devices;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：36 / 41
页数：6
相关论文
共 50 条
  • [1] Reduced graphene oxide field-effect transistor with indium tin oxide extended gate for proton sensing
    Thuy Kieu Truong
    Nguyen, T. N. T.
    Tran Quang Trung
    Sohn, Il Yung
    Kim, Duck-Jin
    Jung, Jin-Heak
    Lee, N. -E.
    CURRENT APPLIED PHYSICS, 2014, 14 (05) : 738 - 743
  • [2] Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensing
    Nguyen, T. N. T.
    Seol, Y. G.
    Lee, N. -E.
    ORGANIC ELECTRONICS, 2011, 12 (11) : 1815 - 1821
  • [3] Effect of Back-Gate Dielectric on Indium Tin Oxide (ITO) Transistor Performance and Stability
    Daus, Alwin
    Hoang, Lauren
    Gilardi, Carlo
    Wahid, Sumaiya
    Kwon, Jimin
    Qin, Shengjun
    Ko, Jung-Soo
    Islam, Mahnaz
    Kumar, Aravindh
    Neilson, Kathryn M.
    Saraswat, Krishna C.
    Mitra, Subhasish
    Wong, H. -S. Philip
    Pop, Eric
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (11) : 5685 - 5689
  • [4] Study on extended gate field effect transistor with tin oxide sensing membrane
    Chi, LL
    Chou, JC
    Chung, WY
    Sun, TP
    Hsiung, SK
    MATERIALS CHEMISTRY AND PHYSICS, 2000, 63 (01) : 19 - 23
  • [5] pH and procaine sensing characteristics of extended-gate field-effect transistor based on indium tin oxide glass
    Chou, JC
    Chiang, JL
    Wu, CL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7A): : 4838 - 4842
  • [6] The effect of the crystallization of indium tin oxide on indium tin oxide wet etching based on gate line with the structure of copper/indium tin oxide
    Xiao, Juncheng
    Zeng, Guang
    Li, Ji
    Zhang, Shengdong
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2023, 31 (08) : 522 - 528
  • [7] A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating
    Dasgupta, S.
    Gottschalk, S.
    Kruk, R.
    Hahn, H.
    NANOTECHNOLOGY, 2008, 19 (43)
  • [8] A TIN OXIDE FIELD-EFFECT TRANSISTOR
    KLASENS, HA
    KOELMANS, H
    SOLID-STATE ELECTRONICS, 1964, 7 (09) : 701 - 702
  • [9] Characterization of nickel/indium tin oxide based extended gate-field effect transistor as glucose sensor in acidosis, normal and alkalosis media
    Khalifa, Ali M.
    Abdulateef, S. A.
    Sabah, Fayroz A.
    Kabaa, E. A.
    Ahmed, Naser M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 103
  • [10] Electrochemically-Gated Field-Effect Transistor with Indium Tin Oxide Nanoparticles as Active Layer
    Dasgupta, S.
    Dehm, S.
    Kruk, R.
    Hahn, H.
    ACTA PHYSICA POLONICA A, 2009, 115 (02) : 473 - 476
12345