V-band planar Gunn Oscillators and VCOs on AlN substrates using flip-chip bonding technology

被引：0

作者：

Watanabe, K ^{[1
]}

Deguchi, T ^{[1
]}

Nakagawa, A ^{[1
]}

机构：

[1] New Japan Radio Co Ltd, Res & Dev Headquarters, Kamifukuoka, Saitama 3568510, Japan

来源：

1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the development of V-band planar Gunn Oscillators using novel flip-chip GaAs Gunn diodes mounted on aluminum nitride (AIN) substrates. Due to using flip-chip bonding technology and unpackaged Gunn diodes, the Gunn Oscillator can be expected to realize low-cost mass production. The Gunn Oscillator generates an output power of 63.1mW at 58.73GHz with 2.57% conversion efficiency. An excellent phase noise of 87.67dBc/Hz at 100kHz off carrier has been achieved A varactor tunable Gunn VCO with a tuning range of 450MHz is also demonstrated.

引用

页码：13 / 16

页数：4

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