V-band planar Gunn Oscillators and VCOs on AlN substrates using flip-chip bonding technology

被引：0
|
作者：
Watanabe, K [1 ]
Deguchi, T [1 ]
Nakagawa, A [1 ]
机构：
[1] New Japan Radio Co Ltd, Res & Dev Headquarters, Kamifukuoka, Saitama 3568510, Japan
来源：
1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the development of V-band planar Gunn Oscillators using novel flip-chip GaAs Gunn diodes mounted on aluminum nitride (AIN) substrates. Due to using flip-chip bonding technology and unpackaged Gunn diodes, the Gunn Oscillator can be expected to realize low-cost mass production. The Gunn Oscillator generates an output power of 63.1mW at 58.73GHz with 2.57% conversion efficiency. An excellent phase noise of 87.67dBc/Hz at 100kHz off carrier has been achieved A varactor tunable Gunn VCO with a tuning range of 450MHz is also demonstrated.
引用
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页码：13 / 16
页数：4
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