In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP

被引：16
|
作者：
Chin, A [1 ]
Liao, CC [1 ]
Tsai, C [1 ]
机构：
[1] NATL CHIAO TUNG UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 04期
关键词：
TRANSISTORS; GAINAS;
D O I：
10.1109/55.563314
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dc and microwave performance of an InAs channel HEMT is reported. Room-temperature electron mobility as high as 20 200 cm(2)/Vs is measured, with a high carrier concentration of 2.7x10(12) cm(-2). DC extrinsic transconductance of 714 mS/mm is measured and a unity-current-gain cut-off frequency of 50 GHz is obtained for a 1.1-mu m gate length HEMT. The success of achieving superior Hall mobility and device performance is strongly dependent on the InxAl1-xAs buffer layer design that changes the lattice constant from lattice-matched In0.52Al0.48As to In0.75Al0.25As. The multiple In0.52Al0.48As/InAs monolayer superlattices buffer achieves the best performance as compared to the step-graded InxAl1-xAs and the uniform In0.75Al0.25As buffer.
引用
收藏
页码：157 / 159
页数：3
相关论文
共 50 条
  • [41] OPTICAL WAVE-GUIDES IN IN0.52AL0.48AS GROWN ON INP BY MBE
    RITCHIE, S
    SCOTT, EG
    RODGERS, PM
    ELECTRONICS LETTERS, 1986, 22 (20) : 1066 - 1068
  • [42] CRITICAL LAYER THICKNESS OF N-IN0.52AL0.48AS/IN-0.8GA0.2AS/IN0.52AL0.48AS PSEUDOMORPHIC HETEROSTRUCTURES STUDIED BY PHOTOLUMINESCENCE
    UENO, Y
    TAGUCHI, T
    MATSUGATANI, K
    TAKEUCHI, Y
    SUGIYAMA, Y
    TACANO, M
    HATTORI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (2A): : L162 - L164
  • [43] The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation
    Hu, Xiao
    Zha, Fang-Xing
    Zhan, Jia
    Liu, Bo-Wen
    Gu, Yi
    Shao, Jun
    AIP ADVANCES, 2024, 14 (01)
  • [44] Critical layer thickness on n-In0.52Al0.48As/In0.8Ga0.2As/In0.52Al0.48As pseudomorphic heterostructures studied by photoluminescence
    Ueno, Yoshiki
    Taguchi, Takashi
    Matsugatani, Kazuoki
    Takeuchi, Yukihiro
    Sugiyama, Yoshinobu
    Tacano, Munecazu
    Hattori, Tadashi
    Japanese Journal of Applied Physics, Part 2: Letters, 1994, 33 (2 A):
  • [45] Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic InxAl1-xAs (0.33≤x≤0.52) buffer layers
    Vignaud, D
    Cordier, Y
    Miska, P
    Ferré, D
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 537 - 542
  • [46] COMPOSITION INHOMOGENEITIES IN THE BUFFER LAYERS OF IN0.52AL0.48AS/INXGA1-XAS/INP MULTIQUANTUM-WELL STRUCTURES DRIVEN BY IN SEGREGATION
    PEIRO, F
    CORNET, A
    MORANTE, JR
    GEORGAKILAS, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 1006 - 1009
  • [47] ORGANOMETALLIC MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF INXAL1-XAS ON INP
    QUINN, WE
    TAMARGO, MC
    BRASIL, MJSP
    NAHORY, RE
    FARRELL, HH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 978 - 981
  • [48] Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001) -: art. no. 155333
    Fossard, F
    Helman, A
    Fishman, G
    Julien, FH
    Brault, J
    Gendry, M
    Péronne, E
    Alexandrou, A
    Schacham, SE
    Bahir, G
    Finkman, E
    PHYSICAL REVIEW B, 2004, 69 (15) : 155333 - 1
  • [49] Some effects of indium composition on pseudomorphic InxGa1-xAs/In0.52Al0.48As modulation-doped heterostructures grown by molecular beam epitaxy
    Nanyang Technological Univ, Singapore, Singapore
    J Cryst Growth, 4 (443-448):
  • [50] Some effects of indium composition on pseudomorphic InxGa1-xAs/In0.52Al0.48As modulation-doped heterostructures grown by molecular beam epitaxy
    Yoon, SF
    Miao, YB
    Radhakrishnan, K
    Duan, HL
    JOURNAL OF CRYSTAL GROWTH, 1996, 158 (04) : 443 - 448
12345