In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP

被引：16

作者：

Chin, A ^{[1
]}

Liao, CC ^{[1
]}

Tsai, C ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 04期

关键词：

TRANSISTORS; GAINAS;

D O I：

10.1109/55.563314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dc and microwave performance of an InAs channel HEMT is reported. Room-temperature electron mobility as high as 20 200 cm(2)/Vs is measured, with a high carrier concentration of 2.7x10(12) cm(-2). DC extrinsic transconductance of 714 mS/mm is measured and a unity-current-gain cut-off frequency of 50 GHz is obtained for a 1.1-mu m gate length HEMT. The success of achieving superior Hall mobility and device performance is strongly dependent on the InxAl1-xAs buffer layer design that changes the lattice constant from lattice-matched In0.52Al0.48As to In0.75Al0.25As. The multiple In0.52Al0.48As/InAs monolayer superlattices buffer achieves the best performance as compared to the step-graded InxAl1-xAs and the uniform In0.75Al0.25As buffer.

引用

页码：157 / 159

页数：3

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