Novel CuCMP Slurry Evaluation for 45/40nm BEOL Low-k Technology and Beyond

被引：0

作者：

Zhao, Feng ^{[1
]}

Liu, Hongtao ^{[1
]}

Hu, Tony ^{[1
]}

Chen, Feng ^{[1
]}

Liu, Kent ^{[1
]}

Deng, Wufeng ^{[1
]}

Cao, Junzhu ^{[1
]}

Zhou, Sky ^{[1
]}

Zhang, Jason ^{[1
]}

Zhou, Erico ^{[1
]}

Song, Kerry ^{[1
]}

Zhao, Jun ^{[1
]}

Bao, Ethan ^{[1
]}

Chen, Larry ^{[1
]}

机构：

[1] Semicond Mfg Int Corp, Pudong New Area, Shanghai 201203, Peoples R China

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012) | 2012年 / 44卷 / 01期

关键词：

D O I：

10.1149/1.3694365

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Novel CuCMP slurry was evaluated under different polishing conditions and its impact on topography, thickness and in line test performance was investigated. Generally, topography, such as dishing and erosion, results from over-polishing after Cu polishing step and it can be modified and reduced by fine tuning process parameters. Firstly, different Cu polishing condition has been attempted to produce different topography for barrier polishing to compensate in order to cater for different integration scheme with different oxide material. Secondly, topography can be modified by barrier polishing condition due to high selectivity slurry is used during barrier polishing. Longer polishing time can cause Cu protruded in narrow dense arrays. Electrical data shows Cu polishing overpolishing time has impact on Rs, and longer overpolishing results in higher Rs, as well as high head/platen rotation speed.

引用

页码：531 / 536

页数：6

共 50 条

[1] Challenges of Ultra Low-k Integration in BEOL Interconnect for 45nm and Beyond
Liu, H.
Widodo, J.
Liew, S. L.
Wang, Z. H.
Wang, Y. H.
Lin, B. F.
Wu, L. Z.
Seet, C. S.
Lu, W.
Low, C. H.
Liu, W. P.
Zhou, M. S.
Hsia, L. C.
PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2009, : 258 - 260
[2] A 45 nm CMOS node Cu/Low-k/ultra low-k PECVD SiCOH (k=2.4) BEOL technology
Sankaran, S.
Arai, S.
Augur, R.
Beck, M.
Biery, G.
Bolom, T.
Bonilla, G.
Bravo, O.
Chanda, K.
Chae, M.
Chen, F.
Clevenger, L.
Cohen, S.
Cowley, A.
Davis, P.
Demarest, J.
Doyle, J.
Dimitrakopoulos, C.
Economikos, L.
Edelstein, D.
Farooq, M.
Filippi, R.
Fitzsimmons, J.
Fuller, N.
Gates, S. M.
Greco, S. E.
Grill, A.
Grunow, S.
Hannon, R.
Ida, K.
Jung, D.
Kaltalioglu, E.
Kelling, M.
Ko, T.
Kumar, K.
Labelle, C.
Landis, H.
Lane, M. W.
Landers, W.
Lee, M.
Li, W.
Liniger, E.
Liu, X.
Lloyd, J. R.
Liu, W.
Lustig, N.
Malone, K.
Marokkey, S.
Matusiewicz, G.
McLaughlin, P. S.
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 89 - +
[3] Novel CMP barrier slurry for integrated porous low-k technology of 45nm node
Kuo, H. H.
Song, J. Y.
Lin, K. C.
Chou, C. C.
Chen, Y. H.
Jeng, S. M.
Yu, C. H.
Liang, M. S.
PROCEEDINGS OF THE IEEE 2006 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2006, : 137 - 139
[4] BEOL process integration technology for 45nm node porous low-k/copper interconnects
Matsunaga, N
Nakamura, N
Higashi, K
Yamaguchi, H
Watanabe, T
Akiyama, K
Nakao, S
Fujita, K
Miyajima, H
Omoto, S
Sakata, A
Katata, T
Kagawa, Y
Kawashima, H
Enomoto, Y
Hasegawa, T
Shibata, H
PROCEEDINGS OF THE IEEE 2005 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2005, : 6 - 8
[5] Comparison of Lidless & Overmold Flip Chip Package with 40nm Ultra Low-K Silicon Technology
Prasad, Aparna
Kang, Teck Gyu
Li, Yuan
Robinson, Dale
Pasia, Rodel
Yoo, Bosun
2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2010, : 31 - 35
[6] UNIFORMITY IMPACT ON THE UPSTREAM ELECTROMIGRATION OF 40NM LOW-K CU INTERCONNECT
Zhao, Xiangfu
Zhao, Atman
2015 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE, 2015,
[7] Length Dependence Effect in 40nm Cu Low-k Dielectric Breakdown
Song, Zhuo
Han, Kun
Zhang, Liwen
Atman, Zhao Yong
Wang, York
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012), 2012, 44 (01): : 1145 - 1149
[8] High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
Narasimha, S.
Onishi, K.
Nayfeh, H. M.
Waite, A.
Weybright, M.
Johnson, J.
Fonseca, C.
Corliss, D.
Robinson, C.
Crouse, M.
Yang, D.
Wu, C-H. J.
Gabor, A.
Adam, T.
Ahsan, I.
Belyansky, M.
Black, L.
Butt, S.
Cheng, J.
Chou, A.
Costrini, G.
Dimitrakopoulos, C.
Domenicucci, A.
Fisher, P.
Frye, A.
Gates, S.
Greco, S.
Grunow, S.
Hargrove, M.
Holt, J.
Jeng, S-J.
Kelling, M.
Kim, B.
Landers, W.
Larosa, G.
Lea, D.
Lee, M. H.
Liu, X.
Lustig, N.
McKnight, A.
Nicholson, L.
Nielsen, D.
Nummy, K.
Ontalus, V.
Ouyang, C.
Ouyang, X.
Prindle, C.
Pal, R.
Rausch, W.
Restaino, D.
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 423 - +
[9] Challenges in Low-k Integration of Advanced Cu BEOL Beyond 14 nm Node
Inoue, Naoya
2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013,
[10] Investigation of BEOL Post Etch Wet Cleaning for 40nm Node and Beyond
Sheng, Wei
Chen, Kun
Li, Fang
Zhu, Yefang
Jia, Lili
Liu, Wenyan
Fang, Jinxun
Peng, Albert
2015 China Semiconductor Technology International Conference, 2015,

← 1 2 3 4 5 →