Vibrations of Photocurrent Induced by IR Light in Silicon with Quantum Dots

被引：1

作者：

Arzikulov, E. U. ^{[1
]}

Parmankulov, I. P. ^{[1
]}

机构：

[1] Navoi Samarkand State Univ, Samarkand 140104, Uzbekistan

来源：

SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY | 2008年 / 44卷 / 06期

关键词：

Apply Electrochemistry; Surface Engineer; Capture Cross Section; Manganese Atom; Negative Differential Conduction;

D O I：

10.3103/S1068375508060148

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Experimental results related to the research of photocurrent vibrations induced by IR light in silicon with quantum dots are presented. It is shown that the large amplitude of the vibrations ( up to 1 A) and the depth of the modulation (similar to 100%) observed in the experiment cannot be explained in the framework of the S. G. Kalashnikov Theory. To explain the observed photocurrent vibrations, the self-organized quantum dots, which possess anomalously large asymmetric capture cross sections for charge carriers, are used.

引用

页码：504 / 507

页数：4

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