Vibrations of Photocurrent Induced by IR Light in Silicon with Quantum Dots

被引：1
|
作者：
Arzikulov, E. U. [1 ]
Parmankulov, I. P. [1 ]
机构：
[1] Navoi Samarkand State Univ, Samarkand 140104, Uzbekistan
来源：
SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY | 2008年 / 44卷 / 06期
关键词：
Apply Electrochemistry; Surface Engineer; Capture Cross Section; Manganese Atom; Negative Differential Conduction;
D O I：
10.3103/S1068375508060148
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Experimental results related to the research of photocurrent vibrations induced by IR light in silicon with quantum dots are presented. It is shown that the large amplitude of the vibrations ( up to 1 A) and the depth of the modulation (similar to 100%) observed in the experiment cannot be explained in the framework of the S. G. Kalashnikov Theory. To explain the observed photocurrent vibrations, the self-organized quantum dots, which possess anomalously large asymmetric capture cross sections for charge carriers, are used.
引用
收藏
页码：504 / 507
页数：4
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