Modeling and simulation of single- and multiple-gate 2-D MESFET's

被引：5
|
作者：
Iníguez, B
Lü, JQ
Hurt, MJ
Peatman, WCB
Shur, MS
机构：
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, CIEEM, Troy, NY 12180 USA
[3] Adv Device Technol Inc, Charlottesville, VA 22903 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 08期
关键词：
D O I：
10.1109/16.777165
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe a physically based model for a two-dimensional (2-D) MESFET, a novel hetero-dimensional transistor, The model is valid for a "single" gate in which the sidewall contacts are biased together, a dual-gate configuration in which the gates are biased independently, and a multiple-gate configuration for three or more side gates. The model has been implemented in the circuit simulator AIM-SPICE, The modeling results are in good agreement with the experimental data.
引用
收藏
页码：1742 / 1748
页数：7
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