Increasing the degradation resistance of semi-insulating gallium arsenide crystals by plasma processing

被引：2
|
作者：
Klyui, N. I. [1 ]
Liptuga, A. I.
Lozinskii, V. B.
Oksanich, A. P.
Terban, V. A.
Fomovskii, F. V.
机构：
[1] Natl Acad Sci Ukraine, Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
TECHNICAL PHYSICS LETTERS | 2012年 / 38卷 / 11期
关键词：
GAAS CRYSTALS;
D O I：
10.1134/S1063785012110235
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of processing in hydrogen plasma on the resistance of semi-insulating GaAs crystals to degradation under the action of high-frequency (HF) electromagnetic fields and heat treatments has been studied by measuring the room-temperature IR transmission spectra of samples in a 5-15 mu m wavelength range. It is established that the transmission of plasma-treated crystals, in contrast to untreated samples, does not decrease under subsequent HF irradiation and even increases in comparison to the initial transmission. A mechanism is proposed that explains the influence of processing in hydrogen plasma on the degradation resistance and optical transmission of semi-insulating GaAs crystals in the IR spectral range. This mechanism takes into account the relaxation of internal mechanical stresses in a near-surface layer of a crystal as a result of the plasma processing.
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页码：1016 / 1019
页数：4
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