Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers (vol 74, pg 1153, 1999)

被引：4
|
作者：
Uchida, K [1 ]
Yang, T [1 ]
Goto, S [1 ]
Mishima, T [1 ]
Niwa, A [1 ]
Gotoh, J [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 21期
关键词：
D O I：
10.1063/1.124114
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：3230 / 3230
页数：1
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