Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells (vol 84, pg 3052, 2004)

被引:1
|
作者
Fan, W. H. [1 ]
Olaizola, S. M.
Wells, J.-P. R.
Fox, A. M.
Wang, T.
Parbrook, P. J.
Mowbray, D. J.
Skolnick, M. S.
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Univ Sheffield, EPSRC Natl Ctr IIIV Technol, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
关键词
D O I
10.1063/1.2778361
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页数:1
相关论文
共 38 条
  • [1] Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells
    Fan, WH
    Olaizola, SM
    Wells, JPR
    Fox, AM
    Wang, T
    Parbrook, PJ
    Mowbray, DJ
    Skolnick, MS
    APPLIED PHYSICS LETTERS, 2004, 84 (16) : 3052 - 3054
  • [2] Carrier capture times in InGaN/GaN multiple quantum wells
    Fan, WH
    Olaizola, SM
    Wang, T
    Parbrook, PJ
    Wells, JPR
    Mowbray, DJ
    Skolnick, MS
    Fox, AM
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 240 (02): : 364 - 367
  • [3] Microstructure studies of InGaN/GaN multiple quantum wells
    Lin, YS
    Hsu, C
    Ma, KJ
    Feng, SW
    Cheng, YC
    Chung, YY
    Liu, CW
    Yang, CC
    Chyi, JI
    CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, 2001, : 218 - 219
  • [4] Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering
    Vallone, Marco
    Goano, Michele
    Bertazzi, Francesco
    Ghione, Giovanni
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (12)
  • [5] Investigation of electron energy states in InGaN/GaN multiple quantum wells
    Asghar, M.
    Hurwitz, E.
    Melton, A.
    Jamil, M.
    Ferguson, Ian T.
    Tsu, Rahpael
    PHYSICA B-CONDENSED MATTER, 2012, 407 (15) : 2850 - 2853
  • [6] Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells (vol 83, pg 1965, 2003)
    O'Neill, JP
    Ross, IM
    Cullis, AG
    Wang, T
    Parbrook, PJ
    APPLIED PHYSICS LETTERS, 2004, 84 (09) : 1612 - 1612
  • [7] Electron microscopy investigations of V defects in multiple InGaN/GaN quantum wells and InGaN quantum dots
    Yang, J. R.
    Li, W. C.
    Tsai, H. L.
    Hsu, J. T.
    Shiojiri, M.
    JOURNAL OF MICROSCOPY, 2010, 237 (03) : 275 - 281
  • [8] Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
    Allegre, J
    Lefebvre, P
    Juillaguet, S
    Knap, W
    Camassel, J
    Chen, Q
    Khan, MA
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1997, 2 (33-41):
  • [9] Photoluminescence studies on InGaN/GaN multiple quantum wells with different degree of localization
    Hao, M
    Zhang, J
    Zhang, XH
    Chua, S
    APPLIED PHYSICS LETTERS, 2002, 81 (27) : 5129 - 5131
  • [10] Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells
    O'Neill, JP
    Ross, IM
    Cullis, AG
    Wang, T
    Parbrook, PJ
    APPLIED PHYSICS LETTERS, 2003, 83 (10) : 1965 - 1967