Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O

被引：51

作者：

Sun, SC ^{[1
]}

Chen, TF ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,DEPT ELECT ENGN,HSINCHU,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 07期

关键词：

D O I：

10.1109/55.506365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) Ta2O5 films by developing a new postdeposition single-step annealing technique. Experimental results indicate that excited oxygen atoms generated by N2O decomposition can effectively repair the oxygen vacancies in the as-deposited CVD Ta2O5 film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: rapid thermal O-2 annealing and furnace dry-O-2 annealing. The comparison reveals that RTN(2)O annealing has the lowest leakage current, superior thermal stability of electrical characteristics and the best time-dependent dielectric breakdown (TDDB) reliability.

引用

页码：355 / 357

页数：3

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