Erratum to: Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O

被引：0
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作者：
N. Novkovski
E. Atanassova
机构：
[1] Faculty of Natural Sciences and Mathematics,Institute of Physics
[2] Bulgarian Academy of Sciences,Institute of Solid State Physics
来源：
Applied Physics A | 2005年 / 81卷
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页码：1511 / 1512
页数：1
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