Asymmetric Tunnel Field-Effect Transistors as Frequency Multipliers

被引:23
|
作者
Madan, Himanshu [1 ]
Saripalli, Vinay [1 ]
Liu, Huichu [1 ]
Datta, Suman [1 ]
机构
[1] Penn State Univ, University Pk, PA 16802 USA
关键词
Ambipolar TFET; asymmetric TFET; band-to-band tunneling; frequency multiplier; mixer;
D O I
10.1109/LED.2012.2214201
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter proposes a novel application of asymmetric (double-gate) tunnel field-effect transistors (asymmetric TFETs) as a frequency multiplier. Work-function tuning of an asymmetric TFET was used to demonstrate symmetric ambipolar transfer characteristics by TCAD simulation. Unlike the conventional balanced FET-based multiplier, the asymmetric TFET design needs only one transistor for rejecting odd harmonics. Advanced design system simulations are used to compare the performance of an n-type FET and an asymmetric TFET frequency multiplier.
引用
收藏
页码:1547 / 1549
页数:3
相关论文
共 50 条
  • [41] FIELD-EFFECT TRANSISTORS
    SPINULES.I
    STANESCU, C
    DRAGHICI, I
    STUDII SI CERCETARI DE FIZICA, 1972, 24 (01): : 115 - +
  • [42] FIELD-EFFECT TRANSISTORS
    WITTLING.H
    JOURNAL OF THE SOCIETY OF MOTION PICTURE & TELEVISION ENGINEERS, 1965, 74 (09): : 858 - +
  • [43] FIELD-EFFECT TRANSISTORS
    CAVE, KJS
    WILSON, BLH
    SCIENCE PROGRESS, 1977, 64 (255) : 323 - 339
  • [44] Short-Drain Effect of 5 nm Tunnel Field-Effect Transistors
    Chen, Yu-Hsuan
    Nguyen Dang Chien
    Tsai, Jr-Jie
    Luo, Yan-Xiang
    Shih, Chun-Hsing
    2015 SILICON NANOELECTRONICS WORKSHOP (SNW), 2015,
  • [45] A Review of Tunnel Field-Effect Transistors for Improved ON-State Behaviour
    Karthik, Kadava R. N.
    Pandey, Chandan Kumar
    SILICON, 2023, 15 (01) : 1 - 23
  • [46] Device physics and design of symmetrically doped tunnel field-effect transistors
    Nguyen Dang Chien
    Tran Thi Kim Anh
    Chen, Yu-Hsuan
    Shih, Chun-Hsing
    MICROELECTRONIC ENGINEERING, 2019, 216
  • [47] Drain voltage dependent analytical model of tunnel field-effect transistors
    Verhulst, Anne S.
    Leonelli, Daniele
    Rooyackers, Rita
    Groeseneken, Guido
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (02)
  • [48] Analysis on temperature dependent current mechanism of tunnel field-effect transistors
    Lee, Junil
    Kwon, Dae Woong
    Kim, Hyun Woo
    Kim, Jang Hyun
    Park, Euyhwan
    Park, Taehyung
    Kim, Sihyun
    Lee, Ryoongbin
    Lee, Jong-Ho
    Park, Byung-Gook
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)
  • [49] Improving performance of monolayer arsenene tunnel field-effect transistors by defects
    Song, Shun
    Gong, Jian
    Wen, Hongyu
    Yang, Shenyuan
    NANOSCALE ADVANCES, 2022, 4 (14): : 3023 - 3032
  • [50] Demonstration of T-shaped Channel Tunnel Field-Effect Transistors
    Goswami, Bijoy
    Bhattacharjee, Disha
    Dash, Dinesh Kumar
    Bhattacharya, Ayan
    Sarkar, Subir Kumar
    2018 2ND INTERNATIONAL CONFERENCE ON ELECTRONICS, MATERIALS ENGINEERING & NANO-TECHNOLOGY (IEMENTECH), 2018, : 490 - 494