Asymmetric Tunnel Field-Effect Transistors as Frequency Multipliers

被引：23

作者：

Madan, Himanshu ^{[1
]}

Saripalli, Vinay ^{[1
]}

Liu, Huichu ^{[1
]}

Datta, Suman ^{[1
]}

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 11期

关键词：

Ambipolar TFET; asymmetric TFET; band-to-band tunneling; frequency multiplier; mixer;

D O I：

10.1109/LED.2012.2214201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter proposes a novel application of asymmetric (double-gate) tunnel field-effect transistors (asymmetric TFETs) as a frequency multiplier. Work-function tuning of an asymmetric TFET was used to demonstrate symmetric ambipolar transfer characteristics by TCAD simulation. Unlike the conventional balanced FET-based multiplier, the asymmetric TFET design needs only one transistor for rejecting odd harmonics. Advanced design system simulations are used to compare the performance of an n-type FET and an asymmetric TFET frequency multiplier.

引用

页码：1547 / 1549

页数：3

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