Laser induced emission spectra of gallium nitride nanoceramics

The paper presents the studies of the intense broadband laser induced emission (LIE) of GaN (gallium nitride) nanoceramics in both the visible and near infrared regions. The GaN nanocrystals crystalized in a hexagonal wurtzite structure with an average grain size of 12 nm calculated using the Scherrer formula. The GaN nanoceramics were compacted by using the low temperature high pressure technique. The optical characterization involved the LIE measurements in the visible and infrared regions relative to excitation power, pressure dependence, and emission kinetic. It was observed that the GaN nanoceramics show extremely short rise and decay times of the laser induced white emission. The photocurrent assisting the laser induced emission of GaN nanoceramics was measured. It was extremely large and increased strongly with the excitation power and the applied electric field.