Spectra of the Gallium Nitride Growth Traps

被引：0
|
作者：
P. A. Brudnyi
机构：
[1] National Research Tomsk State University,
来源：
Russian Physics Journal | 2020年 / 62卷
关键词：
GaN epitaxial layers; growth traps;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The energy spectra of growth traps in the epitaxial layers of undoped and doped gallium nitride grown under various technological conditions are analyzed.
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页码：2235 / 2239
页数：4
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