Laser deposition of gallium nitride films

被引：0
|
作者：
I. V. Grekhov
I. A. Liniĭchuk
I. E. Titkov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 2006年 / 32卷
关键词：
42.62.-b;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Insulating c-oriented hexagonal epitaxial gallium nitride (GaN) films have been obtained by means of pulsed laser sputtering of a gallium target in nonactivated nitrogen atmosphere. The GaN films were deposited onto (0001)-oriented sapphire substrates either directly or above a ZnO buffer layer. The laser-deposited films exhibit edge photoluminescence at 370 nm.
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页码：197 / 198
页数：1
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