Pin diode. characterization and modelling on soi substrate for millimeter-wave applications

被引：0
|
作者：
Duraz, E. [1 ]
Ferrari, P. [1 ]
Duvillaret, L. [1 ]
Coutaz, J. -L. [1 ]
Duchamp, J. -M. [1 ]
Estebe, E. [1 ]
Ghesquiers, J. -P. [1 ]
机构：
[1] Univ Savoie, LAHC, F-73376 Le Bourget Du Lac, France
来源：
35th European Microwave Conference, Vols 1-3, Conference Proceedings | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present high frequency measurements, simulation and modeling of PIN diodes on Silicon On Insulator (SOI) substrate from 40 MHz to 40 GHz and from 74 to 114 GHz. Comparison between simulations and measurements brings to the fore a frequency dependent PIN diode capacitance with reverse bias. We show that the free carriers injected in the diode intrinsic channel induce a frequency dependent complex permittivity of the silicon substrate that is responsible of the frequency behaviour of the PIN diode capacitance. Moreover, no adjustable parameter is required in this model as all the required parmeters can be easily measured.
引用
收藏
页码：1183 / 1185
页数：3
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