Measurements of AlGaN/GaN heterostructures for sensor applications

被引：0

作者：

Hojko, Mikolaj Ryszard ^{[1
]}

Paszuk, Dorota ^{[1
]}

Paszkiewicz, Bogdan ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

来源：

OPTICA APPLICATA | 2013年 / 43卷 / 01期

关键词：

sensor; AlGaN/GaN heterostructure; electrolyte; two-dimensional electron gas (2DEG); pH;

D O I：

10.5277/oa130104

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In the paper, the behavior of AlGaN/GaN HEMT-type heterostructures in a water solution of (KOH + HCl) with differing pH was studied. The influence of the electrolyte pH on channel pinch-off voltage was measured using impedance spectroscopy methods. It was observed that the change of the pH of electrolyte has a strong effect on the pinch-off voltage of AlGaN/GaN HEMT-type heterostructures independently of the concentration of other ions. In high-pH environment the so-called memory effect of heterostructures was revealed. Its possible origin was discussed. A general theory to explain all results was proposed.

引用

页码：35 / 38

页数：4

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