Dual-wavelength monolithic Y-branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy

被引：28
|
作者：
Maiwald, Martin [1 ]
Fricke, Joerg [1 ]
Ginolas, Arnim [1 ]
Pohl, Johannes [1 ]
Sumpf, Bernd [1 ]
Erbert, Goetz [1 ]
Traenkle, Guenther [1 ]
机构：
[1] Ferdinand Braun Inst, Leibniz Inst Hochstfrequenztech, D-12489 Berlin, Germany
来源：
LASER & PHOTONICS REVIEWS | 2013年 / 7卷 / 04期
关键词：
Diode laser; distributed Bragg reflector (DBR); 671nm; Y-branch; Raman spectroscopy; shifted excitation Raman difference spectroscopy; SERDS; FLUORESCENCE REJECTION; SENSOR;
D O I：
10.1002/lpor.201300041
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A dual-wavelength monolithic Y-branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one-step epitaxy. A maximum optical output power of 110 mW is obtained in cw-operation for each laser cavity. The emission wavelengths of the device are 670.5 nm and 671.0 nm with a spectral width of 13 pm (0.3 cm-1) and a mean spectral distance of 0.46 nm (10.2 cm-1) over the whole operating range. Together with a free running power stability of +/- 1.1% this most compact diode laser is ideally suited as an excitation light source for portable shifted excitation Raman difference spectroscopy (SERDS).
引用
收藏
页码：L30 / L33
页数：4
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