Shifted Excitation Raman Difference Spectroscopy using a Dual-Wavelength DBR Diode Laser at 785 nm

被引：1
|
作者：
Maiwald, M. [1 ]
Eppich, B. [1 ]
Fricke, J. [1 ]
Ginolas, A. [1 ]
Bugge, F. [1 ]
Klehr, A. [1 ]
Sumpf, B. [1 ]
Erbert, G. [1 ]
Traenkle, G. [1 ]
机构：
[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany
来源：
ADVANCED BIOMEDICAL AND CLINICAL DIAGNOSTIC AND SURGICAL GUIDANCE SYSTEMS XIII | 2015年 / 9313卷
关键词：
Raman spectroscopy; shifted excitation Raman difference spectroscopy; SERDS; DBR laser; diode laser; dual-wavelength diode laser; master oscillator power amplifier; MOPA; 785; nm; FLUORESCENCE REJECTION;
D O I：
10.1117/12.2080922
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The application of shifted excitation Raman difference spectroscopy (SERDS) using a dual wavelength distributed Bragg reflector (DBR) diode laser at 785 nm will be presented. Both excitation wavelengths necessary for SERDS provide an optical power of more than 160 mW in continuous wave operation. Raman experiments are carried out and demonstrate the suitability of the excitation light source for SERDS. Moreover, a dual-wavelength master-oscillator power amplifier diode laser system is presented. The diode laser system reaches optical powers larger 750 mW while the spectral properties of the dual-wavelength laser remain unchanged.
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页数：6
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