Dual-wavelength monolithic Y-branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy

被引：28

作者：

Maiwald, Martin ^{[1
]}

Fricke, Joerg ^{[1
]}

Ginolas, Arnim ^{[1
]}

Pohl, Johannes ^{[1
]}

Sumpf, Bernd ^{[1
]}

Erbert, Goetz ^{[1
]}

Traenkle, Guenther ^{[1
]}

机构：

[1] Ferdinand Braun Inst, Leibniz Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

LASER & PHOTONICS REVIEWS | 2013年 / 7卷 / 04期

关键词：

Diode laser; distributed Bragg reflector (DBR); 671nm; Y-branch; Raman spectroscopy; shifted excitation Raman difference spectroscopy; SERDS; FLUORESCENCE REJECTION; SENSOR;

D O I：

10.1002/lpor.201300041

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A dual-wavelength monolithic Y-branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one-step epitaxy. A maximum optical output power of 110 mW is obtained in cw-operation for each laser cavity. The emission wavelengths of the device are 670.5 nm and 671.0 nm with a spectral width of 13 pm (0.3 cm-1) and a mean spectral distance of 0.46 nm (10.2 cm-1) over the whole operating range. Together with a free running power stability of +/- 1.1% this most compact diode laser is ideally suited as an excitation light source for portable shifted excitation Raman difference spectroscopy (SERDS).

引用

页码：L30 / L33

页数：4

共 24 条

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