Radiation damage features on mica and L-valine probed by scanning force microscopy (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 38-42, 1995)

被引：0
|
作者：
Daya, DDNB [1 ]
Hallen, A [1 ]
Eriksson, J [1 ]
Kopniczky, J [1 ]
Papaleo, R [1 ]
Reimann, CT [1 ]
Hakansson, P [1 ]
Sundqvist, BUR [1 ]
Brunelle, A [1 ]
DellaNegra, S [1 ]
LeBeyec, Y [1 ]
机构：
[1] UPPSALA UNIV,DEPT RADIAT SCI,DIV ION PHYS,S-75121 UPPSALA,SWEDEN
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：38 / 42
页数：5
相关论文
共 50 条
  • [41] MEVVA ion-implantation of high T-c superconductors (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 624-629, 1995)
    Martin, JW
    Cohen, DD
    Russell, GJ
    Dytlewski, N
    Evans, PJ
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 624 - 629
  • [42] Internal stresses in nickel films prepared by ion beam and vapor deposition (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 116-119, 1995)
    Kuratani, N
    Murakami, Y
    Imai, O
    Ebe, A
    Nishiyama, S
    Ogata, K
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 116 - 119
  • [43] Ion beam assisted deposition of ZrO2 thin films (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 110-115, 1995)
    Neubeck, K
    Nitsche, R
    Hahn, H
    Alberts, L
    Wolf, GK
    Friz, M
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 110 - 115
  • [44] Synthesis of (Ti,Al)N films by ion beam assisted deposition (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 120-125, 1995)
    Setsuhara, Y
    Suzuki, T
    Makino, Y
    Miyake, S
    Sakata, T
    Mori, H
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 120 - 125
  • [45] Ion beam modification of metal-polymer interfaces for improved adhesion (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 68-73, 1995)
    Ratchev, BA
    Was, GS
    Booske, JH
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 68 - 73
  • [46] Elevated temperature Ge implantation into Si and the effect of subsequent thermal annealing (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 271-276, 1995)
    Wong, WC
    Elliman, RG
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 271 - 276
  • [47] Temperature and dose dependence of damage production in Si+ and Se+ implanted InP (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 303-307, 1995)
    Wendler, E
    Opfermann, T
    Muller, P
    Wesch, W
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 303 - 307
  • [48] Influence of nuclear energy deposition density on the ion-beam mixing of metallic bilayers (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 65-67, 1995)
    Thome, L
    Jagielski, J
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 65 - 67
  • [49] High-dose oxygen ion implanted heterointerfaces in silicon (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 372-378, 1995)
    Ashok, S
    Krishnan, S
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 372 - 378
  • [50] Ion beam synthesis of planar opto-electronic devices (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 393-399, 1995)
    Polman, A
    Snoeks, E
    vandenHoven, GN
    Brongersma, ML
    Serna, R
    Shin, JH
    Kik, P
    Radius, E
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 393 - 399
12345