Radiation damage features on mica and L-valine probed by scanning force microscopy (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 38-42, 1995)

被引：0
|
作者：
Daya, DDNB [1 ]
Hallen, A [1 ]
Eriksson, J [1 ]
Kopniczky, J [1 ]
Papaleo, R [1 ]
Reimann, CT [1 ]
Hakansson, P [1 ]
Sundqvist, BUR [1 ]
Brunelle, A [1 ]
DellaNegra, S [1 ]
LeBeyec, Y [1 ]
机构：
[1] UPPSALA UNIV,DEPT RADIAT SCI,DIV ION PHYS,S-75121 UPPSALA,SWEDEN
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：38 / 42
页数：5
相关论文
共 50 条
  • [31] Ion beam promoted lithium absorption in glassy polymeric carbon (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 550-554, 1995)
    Zimmerman, RL
    Ila, D
    Jenkins, GM
    Maleki, H
    Poker, DB
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 550 - 554
  • [32] Synthesis of unattainable ion implantation profiles - 'Pseudo-implantation' (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 646-650, 1995)
    Brown, IG
    Anders, A
    Anders, S
    Castro, RA
    Dickinson, MR
    MacGill, RA
    Wang, Z
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 646 - 650
  • [33] Atomic mixing induced in metallic bilayers by high electronic excitations (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 28-33, 1995)
    Leguay, R
    Dunlop, A
    Dunstetter, F
    Lorenzelli, N
    Braslau, A
    Bridou, F
    Corno, J
    Pardo, B
    Chevallier, J
    Colliex, C
    Menelle, A
    Rouviere, JL
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 28 - 33
  • [34] Secondary defect formation in self-ion irradiated silicon (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 216-221, 1995)
    Goldberg, RD
    Simpson, TW
    Mitchell, IV
    Simpson, PJ
    Prikryl, M
    Weatherly, GC
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 216 - 221
  • [35] On the mechanism of crystal growth orientation of ion beam assisted deposited thin films (Reprinted from Nuclear Instruments and Methods in Physics Research B vol 106, pg 142, 1995)
    Ensinger, W
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 142 - 146
  • [36] Metastable alloys synthesised by ion mixing and thermodynamic and kinetic modelling (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 17-22, 1995)
    Liu, BX
    Zhang, ZJ
    Jin, O
    Pan, F
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 17 - 22
  • [37] The use of low energy, ion induced nuclear reactions for proton radiotherapy applications (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 606-617, 1995)
    Horn, KM
    Doyle, B
    Segal, MN
    Hamm, RW
    Adler, RJ
    Glatstein, E
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 606 - 617
  • [38] Considerations on effect of local temperature on primary defect production (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 328-332, 1995)
    Gyulai, J
    Paszti, F
    Szilagyi, E
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 328 - 332
  • [39] Damage of M-type baryum hexaferrites induced by GeV-heavy ion irradiations (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 567-572, 1995)
    Costantini, JM
    Brisard, F
    Meftah, A
    Toulemonde, M
    Studer, F
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 567 - 572
  • [40] Transient enhanced diffusion of dopant in preamorphised Si: The role of EOR defects (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 222-226, 1995)
    Bonafos, C
    Martinez, A
    Faye, MM
    Bergaud, C
    Mathiot, D
    Claverie, A
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 222 - 226
12345