Growth and electrical properties of new semiconductor compound ZnCdHgTe

被引：0

作者：

Khlyap, G ^{[1
]}

Sydorchuk, P ^{[1
]}

机构：

[1] State Pedag Univ, UA-82100 Drogobych, Ukraine

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2001年 / 36卷 / 8-10期

关键词：

ZnCdHgTe; heterostructure; band-gap fluctuations; current-voltage characteristics;

D O I：

10.1002/1521-4079(200110)36:8/10<1027::AID-CRAT1027>3.0.CO;2-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth technology and electric properties of the new semiconductor compound ZnCdHgTe obtained by modified liquid phase epitaxy technique on (111) CdTe single crystal substrates are described. Principal attention is focused on current-voltage characteristics of the heterostructures ZnxCdyHg1-x-yTe/CdTe. The mechanism of carriers transfer, in particular, multi-mode regime a vemed by the charge states localized at the interface, is studied. Results of numerical experiment performed for the first time for examined heterostructures are in good qualitative and quantitative agreement with the data of electric measurements.

引用

页码：1027 / 1034

页数：8

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