Electron spin relaxation dynamics in GaN: influence of temperature, doping density, and crystal orientation

被引：1

作者：

Buss, J. H. ^{[1
]}

Rudolph, J. ^{[1
]}

Starosielec, S. ^{[1
]}

Schaefer, A. ^{[1
]}

Semond, F. ^{[2
]}

Haegele, D. ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Arbeitsgrp Spektroskopie Kondensierten Mat, D-44801 Bochum, Germany

[2] CNRS, Ctr Rech Hetero Epitaxie & Applicat, F-06560 Valbonne, France

来源：

ULTRAFAST PHENOMENA AND NANOPHOTONICS XVII | 2013年 / 8623卷

关键词：

spin relaxation; zincblende and wurtzite bulk GaN; MOLECULAR-BEAM EPITAXY; BAND-STRUCTURE; SEMICONDUCTORS; DEVICE;

D O I：

10.1117/12.2003007

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a systematic study of electron spin relaxation in wurtzite GaN. Fast relaxation is caused by a Rashba effective magnetic field that linearly depends on the electron momentum k. The field prevents spin lifetimes to exceed 50 ps at room temperature and is the origin of an anisotropic spin relaxation tensor that we evidence by magnetic field dependent magneto-optical pump-probe measurements. In addition, the spin lifetime depends as compared to GaAs - weaker on temperature and doping density. We give a fully analytical description of both effects based on D'yakonov-Perel' theory that describes our results quantitatively without any fitting parameter.

引用

页数：8

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