Effective Electrochemical n-Type Doping of ZnO Thin films for Optoelectronic Window Applications

被引：4

作者：

Cembrero-Coca, Paula ^{[1
]}

Mollar, M. ^{[1
]}

Singh, K. C. ^{[2
]}

Mari, B. ^{[1
]}

机构：

[1] Univ Politecn Valencia, Dept Fis Aplicada IDF, Valencia 46022, Spain

[2] Maharshi Dayanand Univ, Dept Chem, Rohtak 124001, Haryana, India

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 07期

关键词：

ZINC-OXIDE FILMS; DOPED ZNO; SUBSTRATE-TEMPERATURE; OPTICAL-PROPERTIES; NANOWIRE ARRAYS; CU+ SITES; GROWTH; ELECTRODEPOSITION; CHLORINE; NANORODS;

D O I：

10.1149/2.023307jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An effective n-type doping of ZnO thin films electrochemically synthetized was achieved by varying the chloride ion concentration in the starting electrolyte. The ratio between chloride and zinc cations was varied between 0 and 2 while the zinc concentration in the solution was kept constant. When the concentration of chloride in the bath increases an effective n-type doping of ZnO films takes place. n-type doping is evidenced by the rise of donors concentration, obtained from Mott-Schottky measurements, as well as from the blueshift observed in the optical gap owing to the Burstein-Moss effect. (C) 2013 The Electrochemical Society. All rights reserved.

引用

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页码：Q108 / Q112

页数：5

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