Effective Electrochemical n-Type Doping of ZnO Thin films for Optoelectronic Window Applications

被引：4
|
作者：
Cembrero-Coca, Paula [1 ]
Mollar, M. [1 ]
Singh, K. C. [2 ]
Mari, B. [1 ]
机构：
[1] Univ Politecn Valencia, Dept Fis Aplicada IDF, Valencia 46022, Spain
[2] Maharshi Dayanand Univ, Dept Chem, Rohtak 124001, Haryana, India
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 07期
关键词：
ZINC-OXIDE FILMS; DOPED ZNO; SUBSTRATE-TEMPERATURE; OPTICAL-PROPERTIES; NANOWIRE ARRAYS; CU+ SITES; GROWTH; ELECTRODEPOSITION; CHLORINE; NANORODS;
D O I：
10.1149/2.023307jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An effective n-type doping of ZnO thin films electrochemically synthetized was achieved by varying the chloride ion concentration in the starting electrolyte. The ratio between chloride and zinc cations was varied between 0 and 2 while the zinc concentration in the solution was kept constant. When the concentration of chloride in the bath increases an effective n-type doping of ZnO films takes place. n-type doping is evidenced by the rise of donors concentration, obtained from Mott-Schottky measurements, as well as from the blueshift observed in the optical gap owing to the Burstein-Moss effect. (C) 2013 The Electrochemical Society. All rights reserved.
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页码：Q108 / Q112
页数：5
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