IA-32 PROCESSOR WITH A WIDE-VOLTAGE-OPERATING RANGE IN 32-NM CMOS

被引:7
|
作者
Ruhl, Gregory
Dighe, Saurabh
Jain, Shailendra
Khare, Surhud
Vangal, Sriram R.
机构
[1] Compute Component Development Organization, Intel
关键词
near-threshold voltage; NTV; pentium; synthesis; timing; wide-voltage-range computing;
D O I
10.1109/MM.2013.8
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Designing a microprocessor that's efficient across a wide-voltage-operating range requires overcoming a variety of microarchitecture and circuit design challenges. In this article, the authors demonstrate their IA-32 processor, which is built in 32-nm cmos technology, which can operate efficiently between 280 mV and 1.2 V. they also discuss some of the circuit and methodology challenges that they overcame.
引用
收藏
页码:28 / 36
页数:9
相关论文
共 50 条
  • [21] Comment on "Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology"
    Hook, Terence B.
    Johnson, Jeffrey B.
    Cathignol, Augustin
    Cros, Antoine
    Ghibaudo, Gerard
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (04) : 1255 - 1256
  • [22] A 32-nm CMOS Frequency Locked Loop for 20-GHz Synthesis with ± 7.6 ppm Resolution
    Bousquet, Jean-Francois
    Aouini, Sadok
    Ben-Hamida, Naim
    Wolczanski, John
    [J]. 2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2013,
  • [23] An 8.0-Gb/s HyperTransport Transceiver for 32-nm SOI-CMOS Server Processors
    Loke, Alvin L. S.
    Doyle, Bruce A.
    Maheshwari, Sanjeev K.
    Fischette, Dennis M.
    Wang, Charles L.
    Wee, Tin Tin
    Fang, Emerson S.
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (11) : 2627 - 2642
  • [24] A 98 GMACs/W 32-Core Vector Processor in 65 nm CMOS
    He, Xun
    Jin, Xin
    Wang, Minghui
    Zhou, Dajiang
    Goto, Satoshi
    [J]. IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, 2011, E94A (12) : 2609 - 2618
  • [25] An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits
    England, Troy D.
    Arora, Rajan
    Fleetwood, Zachary E.
    Lourenco, Nelson E.
    Moen, Kurt A.
    Cardoso, Adilson S.
    McMorrow, Dale
    Roche, Nicolas J-H.
    Warner, Jeffery H.
    Buchner, Stephen P.
    Paki, Pauline
    Sutton, Akil K.
    Freeman, Greg
    Cressler, John D.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) : 4405 - 4411
  • [26] Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs
    Bonfiglio, Valentina
    Iannaccone, Giuseppe
    [J]. SOLID-STATE ELECTRONICS, 2013, 84 : 127 - 131
  • [27] A 32-Gb/s Backplane Transceiver with On-chip AC-coupling and Low Latency CDR in 32-nm SOI CMOS Technology
    Gangasani, Gautam R.
    Bulzacchelli, John F.
    Beukema, Troy
    Hsu, Chun-Ming
    Kelly, William
    Xu, Hui H.
    Freitas, David
    Prati, Andrea
    Gardellini, Daniele
    Cervelli, Giovanni
    Hertle, Juergen
    Baecher, Matthew
    Garlett, Jon
    Reutemann, Robert
    Hanson, David
    Storaska, Daniel W.
    Meghelli, Mounir
    [J]. PROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2013, : 213 - 216
  • [28] An 8-Core MIPS-Compatible Processor in 32/28 nm Bulk CMOS
    Hu, Weiwu
    Yang, Liang
    Fan, Baoxia
    Wang, Huandong
    Chen, Yunji
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2014, 49 (01) : 41 - 49
  • [29] 1.55-μm optically pumped wafer-fused tunable VCSELs with 32-nm tuning range
    Syrbu, A
    Iakovlev, V
    Suruceanu, G
    Caliman, A
    Rudra, A
    Mircea, A
    Mereuta, A
    Tadeoni, S
    Berseth, CA
    Achtenhagen, M
    Boucart, J
    Kapon, E
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (09) : 1991 - 1993
  • [30] Impact of Process Variations on Reliability and Performance of 32-nm 6T SRAM at Near Threshold Voltage
    Kou, Lingbo
    Robinson, William H.
    [J]. 2014 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI), 2014, : 215 - 220