Terahertz emission from semiconductor surfaces illuminated by femtosecond laser pulses

被引：0

作者：

Krotkus, A ^{[1
]}

Adomavicius, R

Malevich, VL

机构：

[1] Inst Semicond Phys, 2600 A Gostauto 11, Vilnius, Lithuania

[2] Natl Acad Sci Belaurs, Inst Phys, Minsk 220072, BELARUS

来源：

ICONO 2005: NONLINEAR LASER SPECTROSCOPY, HIGH PRECISION MEASUREMENTS, AND LASER BIOMEDICINE AND CHEMISTRY | 2006年 / 6257卷

关键词：

terahertz; semiconductors; femtosecond laser;

D O I：

10.1117/12.678368

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

We describe the investigations on terahertz radiation emission from surfaces of several semiconductors illuminated by femtosecond Ti:sapphire laser pulses. This radiation is caused by numerous physical mechanisms, therefore in-deep analysis of its causes can give valuable information about the properties of the material. It is demonstrated that, e.g., in the case of InAs important contribution to the terahertz emission comes from the nonlinear-optical rectification effect induced by the electric field in the surface inversion layer, whereas in CdHgTe alloys this emission is solely caused by the photo-Dember effect. Femtosecond laser pulse absorption in Ge is accompanied by intense electron redistribution between different conduction band valleys. Efficient terahertz emission was, for the first time, observed also from femtosecond laser illuminated thin layers of CuInSe2.

引用

页数：12

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