Nanostructuring of semiconductor surfaces under the action of femtosecond pulses

被引：8
|
作者：
Ganeev, R. A. [1 ,2 ]
Jia, T. Q. [2 ,3 ]
机构：
[1] Sci & Prod Assoc AkademPribor, Tashkent 100125, Uzbekistan
[2] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[3] E China Normal Univ, Shanghai 200062, Peoples R China
来源：
OPTICS AND SPECTROSCOPY | 2008年 / 105卷 / 01期
基金：
日本学术振兴会;
关键词：
D O I：
10.1134/S0030400X08070229
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The nanostructures with dimensions (110-250 nm), much smaller than the wavelength of laser light, obtained on surfaces of various semiconductors under the action of laser ablation by femtosecond pulses are studied. Nanostructures obtained at large angles of incidence and under the action of interference of two femtosecond pulses on the surface of the samples are analyzed.
引用
收藏
页码：141 / 146
页数：6
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